Parameter	Symbol	Limit	Unit
Drain-Source Voltage	V_DS	150	V
Gate-Source Voltage	V_GS	±20	V
Drain Current - Continuous	I_D	140	A
Drain Current @ T_c=100°C	I_D (100°C)	100	A
Pulsed Drain Current	I_DM	440	A
Maximum Power Dissipation	P_D	320	W
Single Pulse Avalanche Energy	E_AS	1296	mJ

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	BV_DSS	V_GS=0V, I_D=250µA	150	-	-	V
Zero Gate Voltage Drain Current	I_DSS	V_DS=150V, V_GS=0V	-	-	1	µA

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Gate Threshold Voltage	V_GS(th)	V_DS=V_GS, I_D=250µA	2.0	3	4.0	V
Drain-Source On-State Resistance	R_DS(ON)	V_GS=10V, I_D=70A	-	5.6	6.2	mΩ

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Input Capacitance	C_iss	V_DS=75V, V_GS=0V, F=1.0MHz	-	5900	-	pF
Output Capacitance	C_oss	V_DS=75V, V_GS=0V, F=1.0MHz	-	690	-	pF
Reverse Transfer Capacitance	C_rss	V_DS=75V, V_GS=0V, F=1.0MHz	-	7	-	pF

Parameter	Symbol	Condition	Typ	Unit
Turn-on Delay Time	t_d(on)	V_DD=75V, I_D=70A, V_GS=10V, R_G=4.7Ω	26	nS
Turn-on Rise Time	t_r	V_DD=75V, I_D=70A, V_GS=10V, R_G=4.7Ω	36	nS
Turn-off Delay Time	t_d(off)	V_DD=75V, I_D=70A, V_GS=10V, R_G=4.7Ω	47	nS
Turn-off Fall Time	t_f	V_DD=75V, I_D=70A, V_GS=10V, R_G=4.7Ω	15	nS

Parameter	Symbol	Condition	Typ	Unit
Total Gate Charge	Q_g	V_DS=75V, I_D=70A, V_GS=10V	80	nC
Gate-Source Charge	Q_gs	V_DS=75V, I_D=70A, V_GS=10V	32	nC
Gate-Drain Charge	Q_gd	V_DS=75V, I_D=70A, V_GS=10V	13	nC

Symbol	Min (mm)	Max (mm)	Min (inch)	Max (inch)
A	4.400	4.600	0.173	0.181
D	9.910	10.250	0.390	0.404
E	8.950	9.750	0.352	0.384
L	12.900	13.400	0.508	0.528
H	7.900	8.100	0.311	0.319

Parameter	Symbol	Value	Unit
Thermal Resistance, Junction-to-Case	R_θJC	0.47	°C/W
Derating Factor	-	2.1	W/°C

NCEP15T14 N-Channel Super Trench Power MOSFET

Overview